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參數資料
| 型號： | SC338AIMSTRT |
| 廠商： | Semtech |
| 文件頁數： | 10/14頁 |
| 文件大小： | 236K |
| 描述： | IC REG CTRLR DUAL POS ADJ 10MSOP |
| 標準包裝： | 1 |
| 類型： | 正，可調式 |
| 輸出數： | 2 |
| 輸出電壓： | 0.5 V ~ 1.8 V，0.5 V ~ 3.3 V |
| 電流 - 電源： | 500µA |
| 輸入電壓： | 5V，12V |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 10-TFSOP，10-MSOP（0.118"，3.00mm 寬） |
| 供應商設備封裝： | 10-MSOP |
| 包裝： | 標準包裝 |
| 產品目錄頁面： | 1359 (CN2011-ZH PDF) |
| 其它名稱： | SC338AIMSDKR |
10
?2004 Semtech Corp.
www.semtech.com
SC338(A)
PRELIMINARY
POWER MANAGEMENT
Applications Infomation (Cont.)
need to be located right next to the power devices. Thus
very accurate output voltages can be obtained since
changes due to heating effects will be minimal.
The 0.1礔 bypass capacitor should be located close to
the supply (IN) and GND pins, and connected directly to
the ground plane.
The feedback resistors should be located at the device,
with the sense line from the output routed from the load
(or top end of the droop resistor if passive droop is being
used) directly to the feedback chain. If passive droop is
being used, the droop resistor should be located right at
the load to avoid adding additional unplanned droop.
Sense and drive lines should be routed away from noisy
traces or components.
For very low input to output voltage differentials, the
input to output / load path should be as wide and short
as possible. Where greater headroom is available, wide
traces may suffice.
Power dissipation within the device is practically
negligible, thus requiring no special consideration during
layout. The MOSFET pass devices should be laid out
according to the manufacturers guidelines for the power
being dissipated within them.
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