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| 型號(hào)： | SCA-CA64ES |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 130K |
| 代理商： | SCA-CA64ES |
SCA-CA64ES
Silicon PIN Photodiode Array
P r e l im in a r y Da ta S h e e t
Copyright
2004
Semicoa
Rev. 4.1
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 3
www.SEMICOA.com
DEVICE CHARACTERISTICS
Mechanical Characteristics
Optical Characteristics
Active Area Size
d
0.85 x 0.85
mm
Spectral Response
λ
400 to 1100
nm
Pixel Pitch
A
1.0
mm
Peak Sensitivity Wavelength
λp
850
nm
characteristics specified at TA = 25°C
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Dark Current
ID
VR = 10 mV
0.1
1.0
pA
Sensitivity
S
λ = 500 nm
λ = 600 nm
0.3
0.4
A/W
Internal Quantum Efficiency
QEint
450 nm
≤ λ ≤ 750 nm
95
100
%
Sensitivity Uniformity
Channel-to-Channel
at wavelength
±2.0
%
CrossTalk*
Channel-to-Channel
adjacent channels
non-adjacent channels
0.2
0.02
0.5
0.05
%
Reverse Breakdown Voltage
BVR
IR = 10 A
5
10
V
Forward Voltage Uniformity
VF
IF = 1 mA
±15
%
Shunt Resistance
RS
VR = ± 10 mV
500
4,000
M
Noise Equivalent Power
NEP
λ = 480 nm
2 x 10
-14
W/√Hz
Response Time
tR
VR = 0 V, Load = 10 k
1
s
Capacitance
Cj
VR = 5 V, f = 1 MHz
20
pF
Tempco of Dark Current
VR = 10 mV
1.07
times/°C
Tempco of Sensitivity
at wavelength
±0.05
%/°C
*Cross talk measured with 0.001” diameter spot centered on active area.
Specifications are subject to change without notice. Please consult the website or factory for current information.
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