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參數(shù)資料
| 型號(hào)： | SCH-V |
| 廠商： | Sharp Corporation |
| 英文描述： | 8 M-bit (1 MB x 8) Smart 5 |
| 中文描述： | 8 M位（1字節(jié)× 8）智能5 |
| 文件頁(yè)數(shù)： | 1/40頁(yè) |
| 文件大小： | 266K |
| 代理商： | SCH-V |
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LH28F008SC-V/SCH-V
DESCRIPTION
The LH28F008SC-V/SCH-V flash memories with
Smart 5 technology are high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications. Their symmetrically-blocked
architecture, flexible voltage and enhanced cycling
capability provide for highly flexible component
suitable for resident flash arrays, SIMMs and memory
cards. Their enhanced suspend capabilities provide
for an ideal solution for code + data storage
applications. For secure code storage applications,
such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the
LH28F008SC-V/SCH-V offer three levels of
protection : absolute protection with V
PP
at GND,
selective hardware block locking, or flexible software
block locking. These alternatives give designers
ultimate control of their code security needs.
FEATURES
Smart 5 technology
– 5 V V
CC
– 5 V or 12 V V
PP
High performance read access time
LH28F008SC-V85/SCH-V85
– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)
LH28F008SC-V12/SCH-V12
– 120 ns (5.0±0.5 V)
Enhanced automated suspend options
– Byte write suspend to read
– Block erase suspend to byte write
– Block erase suspend to read
Enhanced data protection features
– Absolute protection with V
PP
= GND
– Flexible block locking
– Block erase/byte write lockout during power
transitions
SRAM-compatible write interface
High-density symmetrically-blocked architecture
– Sixteen 64 k-byte erasable blocks
Enhanced cycling capability
– 100 000 block erase cycles
– 1.6 million block erase cycles/chip
Low power management
– Deep power-down mode
– Automatic power saving mode decreases I
CC
in static mode
Automated byte write and block erase
– Command user interface
– Status register
ETOX
TM
V nonvolatile flash technology
Packages
– 40-pin TSOP Type I (TSOP040-P-1020)
Normal bend/Reverse bend
– 44-pin SOP (SOP044-P-0600)
– 48-ball CSP (FBGA048-P-0608)
ETOX is a trademark of Intel Corporation.
- 1 -
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
LH28F008SC-V/SCH-V
8 M-bit (1 MB x 8) Smart 5
Flash Memories
DC CHARACTERISTICS
V
CC
deep power-down current (MAX.)
VERSIONS
OPERATING TEMPERATURE
LH28F008SC-V
LH28F008SCH-V
0 to +70
C
–25 to +85
C
10 μA
20 μA
COMPARISON TABLE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SCH10000 | High Voltage,High Density Standard Recovery Rectifier(反向電壓10000V，溫度55℃時(shí)平均整流電流0.5A,高壓，高密度，標(biāo)準(zhǔn)恢復(fù)整流器) |
| SCH15000 | High Voltage,High Density Standard Recovery Rectifier(反向電壓15000V，溫度55℃時(shí)平均整流電流0.5A,高壓，高密度，標(biāo)準(zhǔn)恢復(fù)整流器) |
| SCH20000 | High Voltage,High Density Standard Recovery Rectifier(反向電壓20000V，溫度55℃時(shí)平均整流電流0.5A,高壓，高密度，標(biāo)準(zhǔn)恢復(fù)整流器) |
| SCH25000 | High Voltage,High Density Standard Recovery Rectifier(反向電壓25000V，溫度55℃時(shí)平均整流電流0.5A,高壓，高密度，標(biāo)準(zhǔn)恢復(fù)整流器) |
| SCH5000 | High Voltage,High Density Standard Recovery Rectifier(反向電壓5000V，溫度55℃時(shí)平均整流電流0.5A,高壓，高密度，標(biāo)準(zhǔn)恢復(fù)整流器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SCI0100600 | 制造商:CELDUC 制造商全稱:celduc-relais 功能描述:IGBT BASED DC SOLID-STATE RELAY |
| SCI0251700 | 制造商:CELDUC 制造商全稱:celduc-relais 功能描述:IGBT BASED DC SOLID-STATE RELAY |
| SCI0402S | 制造商:SUPERWORLD 制造商全稱:Superworld Electronics 功能描述:WIREWOUND CHIP INDUCTORS |
| SCI0402S_10 | 制造商:SUPERWORLD 制造商全稱:Superworld Electronics 功能描述:WIREWOUND CHIP INDUCTORS |
| SCI0402S-10NF | 制造商:SUPERWORLD 制造商全稱:Superworld Electronics 功能描述:WIREWOUND CHIP INDUCTORS |
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