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參數資料
| 型號： | SCP-5911 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | IC,MCU,MC68HC11F1CFN3,8-BIT 3MHz,PLCC68 |
| 中文描述： | 3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE |
| 文件頁數： | 1/3頁 |
| 文件大小： | 108K |
| 代理商： | SCP-5911 |
SENSITRON
Part Number: SCP-5911, Rev. -
221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SCP-5911
3 Phase Full Wave Bridge Rectifier Module
Features
Maximum Ratings
PARAMETER
Excellent Thermal Performance
Compact package, Low Weight
Isolated base plate: 1500V
High Surge Capability
(Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
Peak Inverse Voltage and DC Blocking Voltage Per Diode
BV
CES
1100
-
-
V
Module Average Rectified Forward Current T
C
= 55
O
C
T
C
= 100
O
C
T
C
= 125
O
C
Peak Surge Current Per Diode t
P
= 8.3ms
I
O
-
-
-
-
-
-
30
24
18
A
A
A
I
FSM
-
-
150
A
Operating & Storage Temperature Range
T
OP
& T
STG
- 55
-
175
O
C
Electrical Characteristics
PARAMETER
(Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage I
F
=9A, t
P
= 300 μs Pulse
T
C
= 25
O
C
T
C
= 100
O
C
V
F1
V
F2
-
-
1.40
-
1.70
1.55
V
V
Reverse Leakage Current V
R
= 1000V, t
P
= 300 μs Pulse
T
C
= 25
O
C
T
C
= 100
O
C
I
R1
I
R2
-
-
-
-
2.0
50
μA
μA
Breakdown Voltage I
R
= 10
μ
A, t
P
= 300 μs Pulse
B
VR
1100
-
-
V
Reverse Recovery Time
I
F
= 10A, di/dt = 10A / μs, V
R
= 100V
Capacitance per Diode V
R
= 10V, f = 1 MHz
Package Characteristics
Thermal Impedance (Junction to Base) per Diode
I
H
= 15A, t
H
= 5ms
Module Thermal Resistance (Junction to Base)
t
RR
-
0.6
1
μs
C
T
-
80
200
pF
Z
θ
JB
-
-
0.80
O
C/W
R
θ
JB
-
-
0.67
O
C/W
Isolation to Base Plate
V
iso
-
-
1500
V
Module Weight
M
-
-
10
gms
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