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參數資料
| 型號： | SD040SC200B |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop |
| 中文描述： | 1 A, SILICON, SIGNAL DIODE |
| 封裝： | DIE-2 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 62K |
| 代理商： | SD040SC200B |
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 760, Rev.-
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SD040SC200A/B
Ultra Fast T
rr
< 7 nsec
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings
(1)
:
Characteristics
Symbol
Peak Inverse Voltage
V
RWM
Max. Average Forward
Current
wave form
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
L = 40mH
Repetitive Avalanche Current
I
AR
I
AS
decay linearly to 0 in 1
μ
s
limited by T
J
max V
A
=1.5V
R
Max. Junction Temperature
T
J
Max. Storage Temperature
T
stg
Electrical Characteristics
(1)
:
Characteristics
Symbol
Max. Forward Voltage Drop
V
F1
@ 1A, Pulse, T
J
= 25
°
C
V
F2
@ 1A, Pulse, T
J
= 125
°
C
Max. Reverse Current
I
R1
@V
R
= 200V, Pulse,
T
J
= 25
°
C
I
R2
@V
R
= 200V, Pulse,
T
J
= 125
°
C
Max. Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
Max. Reverse Recovery Time
t
rr
I
F
= 0.5 A, I
R
= 1.0 A,
I
RM
= 0.25 A, T
J
= 25
°
C
(1) in SHD package
Condition
-
Max.
200
1
Units
V
A
I
F(AV)
50% duty cycle, rectangular
I
FSM
8.3 ms, half Sine wave
(1)
20
A
E
AS
T
J
= 25
°
C, I
AS
= 0.13A,
2.8
mJ
0.13
A
-
-
-65 to +200
-65 to +200
°
C
°
C
Condition
Max.
0.92
0.76
30
Units
V
V
μ
A
0.6
mA
20
pF
7
nsec
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