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參數資料
| 型號： | SD140UF150A35 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 25 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 53K |
| 代理商： | SD140UF150A35 |
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA SHEET
DATASHEET 4222, Rev-
SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE
Applications:
·
Switching Power Supply
·
Converters
·
Free-Wheeling Diodes
·
Polarity Protection Diode
Features:
Glasspassivated Epitaxial Diode with Mesa Structure
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop and Low Reverse Current
Electrically and Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Symbol
Peak Inverse Voltage
V
RWM
Max. Output Current
I
O
50% duty cycle, rectangular
wave form; T
A
= 25
o
C
Max. Junction Temperature
T
J
Max. Storage Temperature
T
stg
Reverse Recovery Time
t
rr
I
F
=0.5A, I
R
=1.0A, I
RM
=0.25A
Electrical Characteristics:
Characteristics
Symbol
V
F1
10A, pulse, T
J
= 25
°
C
Max. Forward Voltage Drop
V
F2
25A, pulse, T
J
= 25
°
C
Max. Reverse Current
I
R1
V
R
= V
RWM
, pulse, T
J
= 25
°
C
I
R2
V
R
= V
RWM
, pulse, T
J
= 125
°
C
Condition
-
Max.
150
25
Units
V
A
-
-
-55 to +175
-55 to +200
35
°
C
°
C
nS
Condition
Max.
0.900
0.975
5.0
1
Units
V
V
μ
A
mA
Mechanical Dimensions: In Inches (mm)
SD140UF150A35
Bottom side metalization: Ti/Ni/Ag - 30 k minimum.
Top side metalization: Al - 25 k minimum
Bottom side is cathode, top side is anode.
Cathode
Anode
0.010 ± 0.001 (0.254 ± 0.025)
ANODE
0.140
±
0.003
(3.556
±
0.076)
0.114
±
0.003
(2.896
±
0.076)
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