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參數資料
| 型號： | SD1490-1 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-4 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 32K |
| 代理商： | SD1490-1 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 200 mA
BV
CBO
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
h
FE
V
CE
= 5.0 V I
C
= 3.0 A
TEST CONDITIONS (PER SIDE)
MINIMUM TYPICAL MAXIMUM
30
UNITS
V
45
V
3.0
V
10
100
---
C
OB
V
CB
= 28 V
f = 1.0 MHz
72
pF
G
P
V
CE
= 26.5 V I
C
= 2 X 1.6 A
V
CE
= 28 V
I
C
= 2 X 250 mA
P
out
= 50 W
V
CE
= 26.5 V P
out
= 25 W
VISION
= -8.0dB
SOUND
= -10 dB
CHROMA
= -16dB
f = 860 MHz
8.0
9.0
dB
G
p
f = 860 MHz
7.0
8.0
dB
IMD
3
f = 860 MHz
-45
dBc
NPN SILICON RF POWER TRANSISTOR
SD1490-1
DESCRIPTION:
The
ASI SD1490-1
is a Common
Emitter Device Designed for Class A
and AB Amplifier Applications in
Television Band IV & V Transmitters.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
Internal Matching
MAXIMUM RATINGS
I
C
8.0 A
V
CB
45 V
P
DISS
155 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
1.15
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE .450 BAL FLG.(A)
1 = Collector 2 = Base
3 = Emitter
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