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參數資料
| 型號： | SD200SE45B |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON SCHOTTKY RECTIFIER DIE Extremely Low Forward Voltage Drop |
| 中文描述： | 60 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 68K |
| 代理商： | SD200SE45B |
SENSITRON
Technical Data
Data Sheet 4949, Rev.-
SEMICONDUCTOR
221 West Industry Court
3
Deer Park, NY 11729-4681
3
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SD200SE45A/B/C
SILICON SCHOTTKY RECTIFIER DIE
Extremely Low Forward Voltage Drop
Applications:
·
Switching Power Supply
·
Converters
·
Free-Wheeling Diodes
·
Polarity Protection Diode
Features:
Soft Reverse Recovery at Low and High Temperature
Extremely Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings
(1)
:
Characteristics
Symbol
Peak Inverse Voltage
V
RWM
Max. Average Forward Current
I
F(AV)
50% duty cycle, rectangular
wave form
Max. Peak One Cycle Non-
Repetitive Surge Current
Max. Junction Temperature
T
J
Max. Storage Temperature
T
stg
Electrical Characteristics
(1)
:
Characteristics
Symbol
Max. Forward Voltage Drop
V
F1
@ 60A, Pulse, T
J
= 25
°
C
V
F2
@ 60A, Pulse, T
J
= 125
°
C
Max. Reverse Current
I
R1
@V
R
= 45V, Pulse,
T
J
= 25
°
C
I
R2
@V
R
= 45V, Pulse,
T
J
= 125
°
C
Max. Junction Capacitance
C
T
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
(1) in SHD package
Condition
-
Max.
45
60
Units
V
A
I
FSM
8.3 ms, Sine pulse
(1)
860
A
-
-
-65 to +125
-65 to +175
°
C
°
C
Condition
Max.
0.54
0.50
5.0
Units
V
V
mA
800
mA
2600
pF
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