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參數(shù)資料
| 型號： | SD275SE30C |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V |
| 中文描述： | 120 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 188K |
| 代理商： | SD275SE30C |
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4142, Rev A
SILICON SCHOTTKY RECTIFIER DIE
Ultra Low Forward Voltage Drop
Typical Voltage Drop 0.30V
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Ultra Low Forward Voltage Drop
Soft Reverse Recovery at Low and High Temperature
Low Power Loss, High Efficiency
Very High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings
(1)
:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Max. Junction Temperature
Max. Storage Temperature
Symbol
V
RWM
I
F(AV)
Condition
-
Max.
20
120
Units
V
A
50% duty cycle, rectangular
wave form
8.3 msec, sine pulse
I
FSM
1650
A
E
AS
T
J
= 25
°
C, I
AS
= 3.7 A
L = 6.5 mH
I
AS
decay linearly to 0 in 1
μ
s
limited by T
J
max V
A
=1.5V
R
-
-
44.5
mJ
I
AR
3.7
A
T
J
T
stg
-55 to + 150
-55 to + 150
°
C
°
C
Electrical Characteristics
(1)
:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
V
F1
V
F2
V
F3
I
R1
Condition
Typ.
0.42
0.30
0.27
2.7
Max.
0.48
0.35
0.32
20.0
Units
V
V
V
mA
@ 120A, Pulse, T
J
= 25
°
C
@ 120A, Pulse, T
J
= 125
°
C
@ 120A, Pulse, T
J
= 150
°
C
@V
R
= 30V, Pulse,
T
J
= 25
°
C
@V
R
= 30V, Pulse,
T
J
= 125
°
C
@V
R
= 5V, Pulse,
T
J
= 100
°
C
@V
R
= 5V, T
C
= 25
°
C
f
SIG
= 1MHz,
I
SIG
= 50mV (p-p)
I
R2
2240
3000
mA
I
R3
100
180
mA
Max. Junction Capacitance
C
T
6684
8100
pF
(1) in SHD package
SD275SE30A/B/C
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