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參數(shù)資料
| 型號： | SD290-11-31-241 |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 81K |
| 代理商： | SD290-11-31-241 |
High Speed PIN Photodiodes
Specifications
Responsivity:
0.50 A/W minimum, 0.55 A/W typical @ 900nm. YAG enhanced are available for
.35 A/W @ 1064nm on a custom basis.
Series Resistance:
100
maximum (measured by applying +10mA to photodiode and measuring
voltage across anode and cathode)
Part Number
Active Area
Storage &
Operating
Temp.
Dark Current1
@ 50V
Breakdown
Voltage2
@ 10
A
Capacitance3
(typ)
NEP4
Max. Linear
Current5
Response Time6
@ 60V
.
in.
(mm)
(C
° )
(typ)
(nA)
(max)
(nA)
(typ)
(V)
at 0V
(pF)
at 50V
(pF)
(typ)
(W/
√Hz)
(typ)
(mA)
(typ)
(nsec)
SD 020-11-33-211
0.020 (dia.)
(.5 dia.)
-40 to 110
0.5
2.0
75
2.1
0.3
2.4x10-14
0.002
2
SD 041-11-33-211
0.040 x 0.033
(1.0 x .833)
-40 to 110
2.0
8.0
75
5.6
0.5
4.8x10-14
0.008
4
SD 076-11-31-211
0.105 x 0.043
(2.66 x 1.09)
-40 to 110
8.0
30
75
17
2.5
1.0x10-13
0.029
4
SD 100-11-31-221
0.100 (dia.)
(2.54 dia.)
-40 to 110
12
50
75
28
3.5
1.3x10-13
0.051
4
SD 172-11-31-221
0.185 x 0.125
(4.7 x 3.18)
-40 to 110
35
147
75
82
10
2.0x10-13
0.15
4
SD 200-11-31-241
0.200 (dia.)
(5.08 dia.)
-40 to 110
50
200
75
110
11
3.0x10-13
0.20
4
SD 290-11-31-241
0.300 x 0.220
(7.62 x 5.58)
-40 to 110
110
425
75
235
22
3.8x10-13
0.43
6
1.
Dark Current varies with temperature as follows: for T>23
° C, I
D=1.09
TI
D23, and for T<23° C, ID=ID23/1.09
T, where T is the temperature difference from 23°
C, and ID23 is the dark current at 23° C.
2.
Typical values listed. Minimum value shall be 50V.
3.
Typical values are listed in the table. Maximum value is 20% higher than the typical value.
4.
Test conditions are VB=50V and 950nm.
5.
Maximum linear current specifies the level above which the output current deviates more than 10%.
Short circuit current saturates at approximately 10 times this level.
6.
Response times listed are for the rising or falling edge, and were measured at 830nm with a 50
load. Shorter wavelengths will result in faster rise and fall times.
High Speed PIN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SD290-12-22-241 | 功能描述:PHOTODIODE BLUE 5.6X7.6MM TO-8 RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光電檢測器 - 光電二極管 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 波長:850nm 顏色 - 增強(qiáng)型:- 光譜范圍:400nm ~ 1100nm 二極管類型:引腳 nm 下響應(yīng)率:0.62 A/W @ 850nm 響應(yīng)時間:5ns 電壓 - (Vr)（最大）:50V 電流 - 暗（標(biāo)準(zhǔn)）:1nA 有效面積:1mm² 視角:150° 工作溫度:-40°C ~ 100°C 封裝/外殼:徑向，5mm 直徑（T 1 3/4） 其它名稱:475-2649-6 |
| SD2902 | 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 2.5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| SD2903 | 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 5 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| SD2904 | 功能描述:MOSFET N-Ch 65 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SD2904A | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Chip Type 2C2904A Geometry 0600 Polarity PNP |
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