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參數資料
| 型號： | SDA03H0SBD |
| 廠商： | ITT Corporation |
| 英文描述： | Low Profile DIP Switches |
| 中文描述： | 超薄DIP開關 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 192K |
| 代理商： | SDA03H0SBD |
2001 Fairchild Semiconductor Corporation
FSPJ264R, FSPJ264F Rev. A2
File Number
4894
FSPJ264R, FSPJ264F
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
Single Event Effects (SEE) which the Fairchild FS families
have always featured.
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
Star*Power Gold products. Star*Power FETs are optimized
for total dose and r
DS(ON)
performance while exhibiting SEE
capability at full rated voltage up to an LET of 37.
Star*Power Gold FETs have been optimized for SEE and
Gate Charge providing SEE performance to 80% of the
rated voltage for an LET of 82 with extremely low gate
charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45217W.
Features
43A, 250V, r
DS(ON)
= 0.047
UIS Rated
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 10V Off-Bias
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
Photo Current
- 21nA Per-RAD (Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
Packaging
TO-254AA
Ordering Information
RAD LEVEL
SCREENING LEVEL
PART NUMBER/BRAND
10K
Engineering Samples FSPJ264D1
100K
TXV
FSPJ264R3
100K
Space
FSPJ264R4
300K
TXV
FSPJ264F3
300K
Space
FSPJ264F4
TM
D
G
S
CAUTION: Beryllia Warning per MIL-PRF-19500
refer to package specifications.
D
S
G
Data Sheet
June 2001
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SDA03H0SBDR | 制造商:C&K Components 功能描述:- Trays |
| SDA03H0SBR | 功能描述:DIP 開關/ SIP 開關 SW DIP SPST 3POS FLUSH SLIDE 0.1A RoHS:否 制造商:Omron Electronics 位置數量:10 開關類型:DIP 執行器:Rotary 端子節距:2.54 mm 觸點形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole |
| SDA03H0SK | 功能描述:DIP 開關/ SIP 開關 FLUSH ACT 3 POS RoHS:否 制造商:Omron Electronics 位置數量:10 開關類型:DIP 執行器:Rotary 端子節距:2.54 mm 觸點形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole |
| SDA03H0SKD | 功能描述:DIP 開關/ SIP 開關 FLUSH ACT 3 POS RoHS:否 制造商:Omron Electronics 位置數量:10 開關類型:DIP 執行器:Rotary 端子節距:2.54 mm 觸點形式: 端接類型:Solder Pin 電流額定值:100 mA 電壓額定值 DC: 工作溫度范圍: 安裝:Through Hole |
| SDA03H0SKR | 制造商:C&K Components 功能描述:DIP, 3 POS, FLUSH ACTUATOR LOW PROFILE, SPST, GOLD - Tape and Reel 制造商:C&K Components 功能描述:Switch DIP OFF ON SPST 3 Recessed Slide 0.1A 50VDC Gull Wing 1000Cycle 2.54mm SMD T/R |
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