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參數資料
| 型號： | SDB110 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Enclosures; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
| 中文描述： | 1.0安培。肖特基 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 101K |
| 代理商： | SDB110 |
- 50 -
SDBS12
THRU
SDBS110
1.0 AMP. Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
1.0 Ampere
Features
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering:
260
C/ 10 seconds at terminals
Small size, single installation lead solderable per
MIL-STD-202 Method 208
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
DB
DBS
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
SDB
12
SDBS
12
20
14
20
SDB
13
SDBS
13
30
21
30
SDB
14
SDBS
14
40
28
40
SDB
15
SDBS
15
50
35
50
SDB
16
SDBS
16
60
42
60
SDB
19
SDBS
19
90
63
90
SDB
110
SDBS
110
100
70
100
Symbol
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
L
(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1) @ 1.0A
Maximum DC Reverse Current @ T
A
=25
℃
at Rated DC Blocking Voltage @ T
A
=100
℃
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
V
RRM
V
RMS
V
DC
I
(AV)
V
V
V
1.0
A
I
FSM
30
A
V
F
0.5
0.75
0.80
V
0.4
0.05
0.5
I
R
10
5.0
mA
mA
pF
℃
/W
℃
/W
℃
℃
Cj
R
θ
JL
R
θ
JA
T
J
T
STG
50
28
88
Operating Temperature Range
Storage Temperature Range
Notes
:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.5 x 0.5”(12 x 12mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
-65 to +125
-65 to +150
-65 to +150
.404(10.3)
.386(9.80)
.255(6.5)
.245(6.2)
.013(0.33)
.0088(0.22)
.013(0.33)
.003(0.076)
.060(1.53)
.040(1.02)
.205(5.2)
.195(5.0)
.047(1.20)
.040(1.02)
.335(8.51)
.320(8.13)
0
45
.130(3.30)
.120(3.05)
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