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參數資料
| 型號： | SDR30010HGTXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 30 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, CERPACK-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 119K |
| 代理商： | SDR30010HGTXV |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0149A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR30 __ H __ __
│
└
│
└
│
└
└ Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package
G= Cerpack
Recovery Time H = Hyper Fast
Family/Voltage
010 = 100V
015 = 150V
020 = 200V
SDR30010HG
thru
SDR30020HG
30 AMP
HYPER FAST
RECTIFIER
100 - 200 VOLTS
35 nsec
FEATURES:
Hyper Fast Recovery: 35 ns Maximum
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Power Package
Gold Eutectic Die Attach Available
Ultrasonic Aluminum Wire Bonds
TX, TXV, or Space Level Screening Available
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage 3/
SDR30010
SDR30015
SDR30020
VRRM
VRWM
VR
100
150
200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TC= 100C)
IO
30
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA= 25C)
IFSM
250
Amps
Operating & Storage Temperature
TOP & TSTG
-65 to +200
C
Maximum Total Thermal Resistance
Junction to Case
RθJC
1.5
C/W
NOTES:
1/ For ordering information, price, and availability, contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Higher voltages available.
4/ Both anodes tied together.
Cerpack
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