- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄271898 > SDR55U120DRM (SOLID STATE DEVICES INC) 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-254AA PDF資料下載
參數(shù)資料
| 型號(hào)： | SDR55U120DRM |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-254AA |
| 封裝： | HERMETIC SEALED, TO-254, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 101K |
| 代理商： | SDR55U120DRM |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0119C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SDR55U ___ ___ ___ ___
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
└
Package Type
M = TO-254
N = TO-258
P = TO-259
│
└
Configuration
CT = Common Cathode
CA = Common Anode
D = Doubler
DR = Doubler Reverse
│
└
Voltage/Family
080 = 800V
090 = 900V
100 = 1000V
110 = 1100V
120 = 1200V
SDR55U080CT thru
SDR55U120CT Series
55 AMP
ULTRA FAST COMMON CATHODE
RECTIFIER
800 -1200 Volts
50 nsec
Features:
Ultra Fast Recovery: 35 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Forward Voltage Drop
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
Available in Common Anode and Doubler versions
TX, TXV, Space Level Screening Available Consult
Factory.
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SDR55U080
SDR55U090
SDR55U100
SDR55U110
SDR55U120
VRRM
VRWM
VR
800
900
1000
1100
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25C)
3/4/
Io
55
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium
Between Pulses, TA = 25C)
IFSM
250
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +200
C
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case
3/
RθJE
1.25
1.0
C/W
TO-254 (M)
TO-258 (N)
TO-259 (P)
1/ For ordering information, price, operating curves, and
availability - Contact factory.
2/ Screening based on MIL-PRF-19500. Screening
flows available on request.
3/ Both legs tied together.
4/ Package limited.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SDR55U120DRNTXV | 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-258AA |
| SDR55U120DRNTX | 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-258AA |
| SDR55U120DRPTX | 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259 |
| SDR55U120DRP | 55 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259 |
| SDR60U080NTX | 60 A, 800 V, SILICON, RECTIFIER DIODE, TO-258AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SDR560S | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:5.0 AMP Schottky Barrier Rectifiers |
| SDR560SF | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:5.0 AMP Schottky Barrier Rectifiers |
| SDR560SF_09 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:5.0 AMP Schottky Barrier Rectifiers |
| SDR5650-472M | 制造商:Bourns Inc 功能描述: |
| SDR5712A2GW | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:16 VOLTS GENERAL PURPOSE SILICON RECTIFIER |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。