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參數(shù)資料
| 型號(hào)： | SDR6306TX |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 70 A, 150 V, SILICON, RECTIFIER DIODE, DO-5 |
| 封裝： | HERMETIC SEALED PACKAGE-1 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 66K |
| 代理商： | SDR6306TX |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0141A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR
__ __
└ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
└ Family/Voltage
6304 = 50V
6305 = 100V
6306 = 150V
6307 = 200V
SDR6304 thru SDR6307
70 Amp
Ultra Fast Recovery Rectifier
50 - 200 Volts
50 nsec
Features:
Fast Recovery: 50nsec Maximum
Low Forward Voltage Drop
Low Reverse Leakage Current
Single Chip Construction
Hermetically Sealed
For High Efficiency Applications
Replacement for 1N6304, 1N6305, and 1N6306
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings 3/
Symbol
Value
Units
Peak Repetitive Reverse Voltage and
DC Blocking Voltage @ 100A
SDR6304
SDR6305
SDR6306
SDR6307
VRRM
VRWM
VR
50
100
150
200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Io
70
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
IFSM
800
Amps
Operating & Storage Temperature
TOP & TSTG
-55 to +175
C
Thermal Resistance (Junction to Case)
RθJC
0.8
C/W
Notes:
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all maximum ratings/electrical characteristics @25°C.
DO-5
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| SDR63CTJ | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:40A 35nsec 300-600 V Hyper Fast Centertap Rectifier |
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