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參數資料
| 型號： | SDR6WSMSTXV |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6A 5 レsec 1400 to 1800 V Standard Recovery Rectifier |
| 中文描述： | 6 A, 1800 V, SILICON, RECTIFIER DIODE |
| 封裝： | SMS, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 165K |
| 代理商： | SDR6WSMSTXV |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SDR6
__ __ __
│
│
│
│
│
│
│
│
│
│
│
└
Voltage
R = 1400 V
T = 1600 V
W = 1800 V
│
│
│
│
└
Screening
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level
└
Package
___ = Axial w/ .050" lead diameter
A =
Axial w/ .040" lead diameter
SMS
= Surface Mount Square Tab
SDR6W series
6A 5
μ
sec
1400 to 1800 V
Standard Recovery Rectifier
Features
:
Standard Recovery: 5 usec Maximum
High Surge Rating: 75 Amps @ 8.3 mS
and 500A @ 100
μ
S
Low Reverse Leakage Current: 5
μ
A
Low Junction Capacitance: 40 pF
Low Thermal Resistance: 8 - 12 oC/W
Single Chip Construction
Available in Fast and Ultra Fast Speeds.
Consult Factory.
TX, TXV, and S Level Screening iaw MIL-
PRF-19500 Available
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse Voltage
SDR6R
SDR6T
SDR6W
V
RRM
1400
1600
1800
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave)
Peak Surge Current
2/
(8.3 ms Pulse, Half Sine Wave)
T
L
@ 1/8" = 25 °C max
T
TAB
= 55 °C max
T
L
@ 1/8" = 25 °C max
T
TAB
= 55 °C max
Io
6
Amps
I
FSM
75
Amps
Operating & Storage Temperature
T
OP
& T
STG
-65 to +175
oC
Maximum Total Thermal Resistance
Axial @ 1/8 "
SMS
R
θ
JL
12
8
oC/W
Axial
Surface Mount
Square Tab (SMS)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0094A
DOC
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