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參數(shù)資料
型號: SDR951Z
廠商: SOLID STATE DEVICES INC
元件分類: 參考電壓二極管
英文描述: 50A, 35nsec typ., 100-200 V Hyper Fast Rectifier
中文描述: 50 A, 150 V, SILICON, RECTIFIER DIODE, TO-254AA
封裝: HERMETIC SEALED, TO-254Z, 3 PIN
文件頁數(shù): 1/2頁
文件大小: 86K
代理商: SDR951Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR950
__
__
__
|
|
|
|
|
|
|
+
+
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Leg Bend Option
(See Figure 1)
|
|
|
|
|
+
Package
M = TO-254, Z = TO-254Z
SDR950M & Z
Thru
SDR952M & Z
50A, 35nsec typ., 100-200 V
Hyper Fast Rectifier
Features
:
Hyper Fast Recovery: 50nsec Maximum
3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach
Ultrasonic Aluminum Wire Bonds
Higher Voltages and Faster Recovery Times
Available, Contact Factory
Ceramic Seal for Improved Hermeticity Available
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse Voltage
SDR950M & Z
SDR951M & Z
SDR952M & Z
V
RRM
V
RWM
V
R
100
150
200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25 °C)
5/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, or equivalent DC)
4/
Io
50
Amps
I
FSM
350
Amps
Operating & Storage Temperature
T
OP
& T
STG
-65 to +200
oC
Maximum Total Thermal Resistance
Junction to Case
4/
R
q
JC
0.85
oC/W
-
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I
F
=10 Amp, di/dt = 200A/μs
4/ Pins 2 and 3 Tied Together.
5/ T
C
= 150
°
C, Derate to 0A @ 200
°
C.
-
TO-254 (M)
-
TO-254Z (Z)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0039K
DOC
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