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參數(shù)資料
| 型號(hào)： | SDR998DN |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 60 A, 800 V, SILICON, RECTIFIER DIODE, TO-258AA |
| 封裝： | HERMETIC SEALED, TO-258, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 48K |
| 代理商： | SDR998DN |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0119B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Features:
Ultra Fast Recovery: 60 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Forward Voltage Drop
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
Available in Common Anode and Doubler versions:
SDR998CAN&P-SDR9912CAN&P
SDR998DN&P-SDR9912DN&P
TX, TXV, Space Level Screening AvailableConsult
Factory.
SDR998CTN&P
thru
SDR9912CTN&P
100 AMP
800 -1200 Volts
80 nsec
ULTRA FAST COMMON
CATHODE RECTIFIER
TO-258
TO-259
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SDR998CTN&P
SDR999CTN&P
SDR9910CTN&P
SDR9911CTN&P
SDR9912CTN&P
VRRM
VRWM
VR
800
900
1000
1100
1200
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25C)note 1, 2
Io
60
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25C)note 2
IFSM
550
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +200
C
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case, note 1
RθJE
0.9
0.5
C/W
Note 1: Both legs tied together
Note 2: Package limited
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SDR9912CAP | 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259 |
| SDR9912DN | 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-258AA |
| SDR9912DP | 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-259 |
| SDR9912CAN | 60 A, 1200 V, SILICON, RECTIFIER DIODE, TO-258AA |
| SDR9910DN | 60 A, 1000 V, SILICON, RECTIFIER DIODE, TO-258AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SDR998N | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:50 AMP 800 -1200 Volts 80 nsec Ultra Fast Recovery Rectifier |
| SDR998P | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:50 AMP 800 -1200 Volts 80 nsec Ultra Fast Recovery Rectifier |
| SDR999CT/3 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:100 AMP 800 -1200 Volts 80 nsec ULTRA FAST COMMON CATHODE CENTERTAP RECTIFIER |
| SDR999CTN | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:100 AMP 800 -1200 Volts 80 nsec ULTRA FAST COMMON CATHODE RECTIFIER |
| SDR999CTP | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:100 AMP 800 -1200 Volts 80 nsec ULTRA FAST COMMON CATHODE RECTIFIER |
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