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參數資料
| 型號： | SDT10S60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Silicon Carbide Schottky Diode |
| 中文描述： | 碳化硅肖特基二極管 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 618K |
| 代理商： | SDT10S60 |
2001-12-04
Page 1
SDP10S30, SDB10S30
SDT10S30
Preliminary data
Silicon Carbide Schottky Diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
Product Summary
V
RRM
Q
c
I
F
300
V
23
nC
10
A
P-TO220-2-2.
P-TO220-3-1.
P-TO220-3.SMD
Pin 1
n.c.
PIN 2
C
PIN 3
A
n.c.
C
A
Marking
D10S30
D10S30
D10S30
Type
SDP10S30
Package
P-TO220-3-1.
Ordering Code
Q67040-S4372
SDB10S30
P-TO220-3.SMD Q67040-S4373
SDT10S30
P-TO220-2-2.
Q67040-S4447
C
A
Maximum Ratings
,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
I
F
I
FRMS
I
FSM
Value
10
Unit
A
Continuous forward current,
T
C
=100°C
RMS forward current
,
f
=50
Hz
Surge non repetitive forward current, sine halfwave
14
T
C
=25°C,
t
p
=10ms
Repetitive peak forward current
36
T
j
=150°C,
T
C
=100°C,
D
=0.1
Non repetitive peak forward current
I
FRM
45
t
p
=10μs,
T
C
=25°C
i
2
t
value
,
T
C
=25°C,
t
p
=10ms
Repetitive peak reverse voltage
I
FMAX
100
i
2
d
t
V
RRM
V
RSM
P
tot
T
j ,
T
stg
6.5
A2s
V
300
Surge peak reverse voltage
300
65
Power dissipation
,
T
C
=25°C
Operating and storage temperature
W
-55... +175
°C
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相關代理商/技術參數 |
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| SDT10S60_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
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