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參數資料
| 型號： | SE5450-013 |
| 元件分類： | 紅外LED |
| 英文描述： | 3.77 mm, 1 ELEMENT, INFRARED LED, 935 nm |
| 文件頁數： | 1/4頁 |
| 文件大小： | 489K |
| 代理商： | SE5450-013 |
GaAs Infrared Emitting Diode
SE3450/5450
DESCRIPTION
FEATURES
TO-46 metal can package
Choice of flat window or lensed package
90 or 20 (nominal) beam angle option
935 nm wavelength
Wide operating temperature range
(- 55C to +125C)
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
The SE3450/5450 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3450 series has flat window cans
providing a wide beam angle, while the SE5450 series
has glass lensed cans providing a narrow beam angle.
The TO-46 packages offer high power dissipation
capability and are ideally suited for operation in hostile
environment.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
2. ANODE
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
.140 (3.56)
.153 (3.89)
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
(CASE)
DIM_003a.ds4
SE3450
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
5.08
.200
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
.224 (5.89)
.247 (6.27)
2. ANODE
1. CATHODE (TAB)
LEADS:
(CASE)
DIM_003b.ds4
SE5450
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
24
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SE5450-014 | 功能描述:紅外發射源 GaAs Infrared Emitting Diode RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| SE5455 | 制造商:HONEYWELL 制造商全稱:Honeywell Solid State Electronics Center 功能描述:GaAs Infrared Emitting Diode |
| SE5455-001 | 功能描述:紅外發射源 GaAs Infrared Emitting Diode RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| SE5455-002 | 功能描述:紅外發射源 GaAs Emitting Diode TO-46 Metal Can Pkg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| SE5455-003 | 功能描述:紅外發射源 GaAs Emitting Diode TO-46 Metal Can Pkg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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