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參數(shù)資料
| 型號： | SED110LT30S |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 整流器 |
| 英文描述： | 110 A, 30 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, SEDPACK-1 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 93K |
| 代理商： | SED110LT30S |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0015C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638-5223
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
SED110 __ __ __
│
└ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
└ Voltage
30 = 30 V
└ Package
LB = Sedpack 3
LE = Sedpack 3 with Lead
LT = Sedpack 3 with Lead and Heatsink
SED110LB30, SED110LE30,
and SED110LT30
110 A / 30 V
Schottky Rectifier
FEATURES:
30 Volt Schottky Rectifier
Average Output Current 110 Amps
Low Reverse Leakage
Low Forward Voltage Drop
Hermetically Sealed Power Surface Mount
Package
Guard Ring for Overvoltage Protection
Eutectic Die Attach
TX, TXV, and Space Level Screening
Available
2/. Consult Factory.
MAXIMUM RATINGS 3/
Symbol
Value
Units
Peak Repetitive Reverse and DC Blocking Voltage
VRRM
VRWM
VR
30
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TC = 100
oC)
IO
110
Amps
Peak Surge Current (8.3 ms pulse, half sine wave superimposed on Io,
allow Junction to reach equilibrium between pulses, TA = 25
oC)
IFSM
1000
Amps
Operating & Storage Temperature
TOP & Tstg
-55 to +150
oC
Maximum Thermal Resistance
(Junction to Case)
RθJC
0.3
oC/W
SEDPACK 3 (LB)
SEDPACK 3 with Lead (LE)
SEDPACK 3 with Lead and Heatsink (LT)
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25C.
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