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參數資料
| 型號： | SEP8706-002 |
| 元件分類： | 紅外LED |
| 英文描述： | 4.45 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件頁數： | 1/4頁 |
| 文件大小： | 416K |
| 代理商： | SEP8706-002 |
AlGaAs Infrared Emitting Diode
SEP8706
DESCRIPTION
FEATURES
Side-looking plastic package
50 (nominal) beam angle
880 nm wavelength
Higher output power than GaAs at equivalent
drive currents
Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger
The SEP8706 is an aluminum gallium arsenide infrared
emitting diode molded in a side-emitting smoke gray
plastic package. The chip is positioned to emit radiation
through a plastic lens from the side of the package.
These devices typically exhibit 70% greater power
intensity than gallium arsenide devices at the same
forward current.
DIM_071.ds4
INFRA-20.TIF
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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相關PDF資料 |
PDF描述 |
|---|---|
| SEP8706-003 | 4.45 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| SEP8736-002 | 2.64 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| SEP8736-003 | 2.64 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| SEP8736-002 | INFRARED LED |
| SES(2)17-100-A | ROTARY OPTICAL POSITION ENCODER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SEP8706-002 | 制造商:Honeywell Sensing and Control 功能描述:IR EMITTING DIODE |
| SEP8706-003 | 功能描述:紅外發射源 AlGaAs Emiting Diode Side-emitting Pls Pk RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| SEP8706-114 | 制造商:Honeywell Sensing and Control 功能描述:INFRARED SENSORS |
| SEP8706-117 | 功能描述:紅外發射源 INFRARED SENSORS RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| SEP8706-210 | 制造商:Honeywell Sensing and Control 功能描述: |
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