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參數資料
| 型號： | SF16GZ51 |
| 廠商： | Toshiba Corporation |
| 英文描述： | MEDIUM POWER CONTROL APPLICATIONS |
| 中文描述： | 中功率控制中的應用 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 242K |
| 代理商： | SF16GZ51 |
SF16GZ51,SF16JZ51
2001-07-13
1
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF16GZ51,SF16JZ51
MEDIUM POWER CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 400,600V
Repetitive Peak Reverse Voltage : V
RRM
= 400,600V
Average On
State Current
Isolation Voltage
MAXIMUM RATINGS
: I
T (AV)
=
1
6A
: V
Isol
=
1
500V AC
CHARACTERISTIC
SYMBOL
RATING
UNIT
SF16GZ51
400
Repetitive Peak
Off
State Voltage and
Repetitive Peak
Reverse Voltage
SF16JZ51
V
DRM
V
RRM
600
V
SF16GZ51
500
Non
Repetitive Peak
Reverse Voltage
(Non
Repetitive <5ms,
T
j
= 0~125°C)
SF16JZ51
V
RSM
720
V
Average On
State Current
(Half Sine Waveform)
I
T(AV)
16
A
R.M.S On
State Current
I
T(RMS)
25
A
250 (50Hz)
Peak One Cycle Surge On
State
Current (Non-Repetitive)
I
TSM
275 (60Hz)
A
I
2
t Limit Value
I
2
t
312
A
2
s
Critical Rate of Rise of On
State
Curret
(Note)
di / dt
100
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Forward Gate Voltage
V
FGM
10
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Isolation Voltage (AC, t = 1min.)
V
Isol
1500
V
Note : di / dt Test Condition, i
G
= 30mA, t
gw
= 10μs, t
gr
≤
250ns
JEDEC
JEITA
TOSHIBA
Weight: 5.9g
―
―
13
16A1B
Unit: mm
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| SF16JZ51 | MEDIUM POWER CONTROL APPLICATIONS |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SF16GZ51(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| SF16JZ51 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MEDIUM POWER CONTROL APPLICATIONS |
| SF16JZ51(F) | 制造商:Toshiba 功能描述:Thyristor SCR 600V 275A 3-Pin (3+Tab) TO-3P(N)IS Cut Tape |
| SF16L | 制造商:JGD 制造商全稱:Jinan Gude Electronic Device 功能描述:1.0 AMP. SUPER FAST RECTIFIERS |
| SF16LG | 制造商:JGD 制造商全稱:Jinan Gude Electronic Device 功能描述:1.0 AMPS. GLASS PASSIVATED SUPER FAST RECTIFIERS |
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