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參數資料
| 型號： | SF30KG |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 文件頁數： | 1/2頁 |
| 文件大小： | 0K |
| 代理商： | SF30KG |
PRE
LI
M
IN
A
R
Y
SF30KG thru SF30MG
FEATURES
Glass passivated chip
Super fast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : JEDEC DO-201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
All Dimensions in millimeter
Max.
Min.
DO-201AD
Dim.
A
D
C
B
25.4
9.50
-
7.30
1.20
4.80
5.30
1.30
DO-201AD
A
C
D
A
B
SUPER FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE
- 800 to 1000 Volts
FORWARD CURRENT - 3.0 Amperes
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
@TA=55 C
@TJ =100 C
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
Typical Junction
Capacitance (Note 2)
3.0
125
5
100
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 3)
R0JA
32
C/W
uA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
SF30KG
800
560
800
CJ
30
pF
Maximum Reverse Recovery Time (Note 1)
TRR
1.7
50
ns
SF30MG
1000
700
1000
1.5
NOTES : 1.Measured with IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Ambient.
SEMICONDUCTOR
LITE-ON
REV. 1-PRE, 01-Dec-2000, KDGF04
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