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參數(shù)資料
| 型號(hào)： | SF8GZ47 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA THYRISITOR SILICON PLANAR TYPE |
| 中文描述： | 東芝THYRISITOR硅平面型 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 248K |
| 代理商： | SF8GZ47 |
SF8GZ47,SF8JZ47
2001-07-13
1
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF8GZ47,SF8JZ47
MEDIUM POWER CONTROL APPLICATIONS
Repetitive Peak off
State Voltage : V
DRM
= 400, 600V
Repetitive Peak Reverse Voltage
Average On
State Current
Isolation Voltage
MAXIMUM RATINGS
: V
RRM
= 400, 600V
: I
T (AV)
= 8A
: V
Isol
=
1
500V AC
CHARACTERISTIC
SYMBOL
RATING
UNIT
SF8GZ47
400
Repetitive Peak
Off
State Voltage
and Repetitive Peak6
Reverse Voltage
SF8JZ47
V
DRM
V
RRM
600
V
SF8GZ47
500
Non
Repetitive Peak
Reverse Voltage
(Non
Repetitive <5ms,
T
j
= 0~125°C)
SF8JZ47
V
RSM
720
V
Average On
State Current
(Half Sine Waveform Tc = 72°C)
I
T (AV)
8
A
R.M.S On
State Current
I
T (RMS)
12.6
A
120 (50 Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
132 (60 Hz)
A
I
2
t Limit Value
I
2
t
72
A
2
s
Critical Rate of Rise of On
State
Current
(Note 1)
di / dt
100
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Forward Gate Voltage
V
FGM
10
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Isolation Voltage (AC, t = 1 min.)
V
ISOL
1500
V
Note 1: di / dt test condition,
V
DRM
= 0.5 × Rated, I
TM
≤
25A, t
gw
≥
10μs,
t
gr
≤
250ns, i
gp
= I
GT
× 2.0
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
―
―
13
10H1B
Unit: mm
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