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參數資料
| 型號： | SFD608G |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 6.0 AMPS. Glass Passivated Super Fast Rectifiers |
| 中文描述： | 6.0安培。玻璃鈍化超快速整流器 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 57K |
| 代理商： | SFD608G |
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Marking
0 5
0 5
30
5
.250(6.55)
.246(6.45)
.211(5.36)
.207(5.26)
.
.
.
.
.024(0.60)
.031(0.80)
.
.
.
.
.093(2.35)
.089(2.25)
.013(0.54)
.011(0.48)
.
.
.053(1.30)
.045(1.10)
.059(1.45)
.039(0.95)
.112(2.85)
.092(2.35)
.211(5.36)
.207(5.26)
.013(0.54)
.011(0.48)
1
2
3
SFD601G
THRU
SFD608G
6.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range
50 to 600 Volts
Current
6.0 Amperes
DPAK
Features
Ultrafast Recovery
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Case: Epoxy molded
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
C/10 seconds.
Weight: 0.4 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @T
C
= 137
℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@3.0A
Maximum DC Reverse Current
@ T
A
=25
℃
at Rated DC Blocking Voltage
@ T
A
=100
℃
Maximum Reverse Recovery Time(Note1)
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Symbol
SFD
601G
50 100 150 200 300 400 500 600
35
70 105 140 210 280 350 420
50 100 150 200 300 400 500 600
6.0
SFD
602G
SFD
603G
SFD
604G
SFD
605G
SFD
606G
SFD
607G
SFD
608G
Units
V
RRM
V
RMS
V
DC
V
V
V
A
I
(AV)
I
FSM
50
A
V
F
1.1
1.3
1.7
V
I
R
5.0
200
35
9.0
μ
A
μ
A
nS
℃
/W
pF
℃
℃
Trr
R
θ
JC
Cj
T
J
T
STG
50
30
-65 to +150
-65 to +150
Storage Temperature Range
Notes: 1. Reverse Recovery Test Conditions: I
=0.5A, I
=1.0A, I
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Thermal Resistance from Junction to Case.
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