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參數資料
| 型號： | SFF110S.22 |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.5 A /100 Volts / 0.6 ヘ N-Channel MOSFET Transistor |
| 中文描述： | 3500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SEALED, SMD.22, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 40K |
| 代理商： | SFF110S.22 |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
DESIGNER’S DATA SHEET
SMD.22
SFF110S.22
3.5 A /100 Volts / 0.6
W
N-Channel MOSFET Transistor
Features:
Rugged Construction with Polysilcon Gate
Small Footprint Hermetic Surface Mount Device with
Excellent Thermal Properties
Replacement/Enhancement for 2N6782
TX, TXV, S-Level Screening Available
Very Fast Switching Characteristics
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
V
DS
V
DG
V
GS
I
D1
I
D2
100
Volts
Volts
Volts
100
+/-20
3.5
2.25
16.5
0.8
Continuous Drain Current
@ T
C
= 25oC
@ T
C
= 100oC
Amps
Power Dissipation @ T
C
= 25oC
Power Dissipation @ T
A
= 25oC
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case and to Ambient
Note 1
Note 2
P
D
W
Top & Tstg
R
q
JC
R
q
JA
-55 to +150
oC
7.5 (typ 5)
156.5
oC/W
Note1:
Derated 60.6 mW/°C above T
C
= 25°C
Note2:
Derated 6.4 mW/°C above T
A
= 25°C
PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE
.220±.007
.140
.052
.134 .030
.070
.090
.150
±.007
.005 TYP
.065±.010
1
2
3
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0015A
DOC
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