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參數資料
型號: SFF24N50Z
廠商: SOLID STATE DEVICES INC
元件分類: 功率晶體管
英文描述: 24 AMP / 500 Volts 0.2 OHM N-Channel POWER MOSFET
中文描述: 24 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: HERMETIC SEALED, TO-254Z, 3 PIN
文件頁數: 1/3頁
文件大小: 61K
代理商: SFF24N50Z
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF24N50 __ __ __
|
|
|
|
|
|
|
|
|
+
Package
3/
M = TO-254
|
|
|
|
|
+
Lead Option
3/
__
= Straight Leads
DB = Down Bend
UB = Up Bend
+
Screening
2/
__
= Not Screen
TX = TX Level
TXV = TXV Level
S = S Level
Z = TO-254Z
SFF24N50M
SFF24N50Z
24 AMP / 500 Volts
0.2
W
N-Channel MOSFET
Features:
Rugged Construction with Polysilicon Gate Cell
Low R
DS(ON)
and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Ceramic Seals for Improved Hermeticity
Hermetically Sealed Surface Mount Power Package
TX, TXV, Space Level Screening Available
Replacement for IXTH24N50 Types
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
V
DS
500
Volts
Gate – Source Voltage
V
GS
±20
Volts
Continuous Collector Current
I
D
24
Amps
Avalanche Current
Repetitive
I
AR
21
Amps
Avalanche Energy
Repetitive
Single Pulse
T
C
= 25oC
T
C
= 55oC
E
AR
E
AS
1
690
150
114
mJ
Power Dissipation
P
D
W
Operating & Storage Temperature
Top & Tstg
-55 to +150
oC
Maximum Thermal Resistance
Junction to Case
R
q
JC
0.83
oC/W
TO-254 (M)
TO-254Z (Z)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00165F
DOC
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