- 您現在的位置：買賣IC網 > PDF目錄271929 > SFF508G 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB PDF資料下載
參數資料
| 型號： | SFF508G |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC, ITO-220AB, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 1021K |
| 代理商： | SFF508G |
High efficiency, low VF
For use in low voltage, high frequency inventor,
free wheeling, and polarity protection application.
MECHANICAL DATA
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Jul - 08
SFF504G ........ SFF508G
5 Amp. Glass Passivated Ultrafast Rectifiers
VRRM
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
IFSM
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC Method)
VDC
Maximum DC Blocking Voltage (V)
70 A
High reliability
VRMS
Tj
Operating Temperature Range
-65 to +150 °C
Current
5 A
Voltage
200 V to 600 V
Cases: ITO-220AB Molded plastic
Polarity: As marked
NOTE: Mounted on Heatsink Size of 50.8mm x 76.2mm x 6.35mm, Al-Plate.
Typical Thermal Resistance (See note)
IF(AV)
Maximum Average Forward Rectified Current
9.5mm Lead Lenght @ Tc = 100 °C
5.0 A
5.5 °C/W
Rth (j-c)
Tstg
Storage Temperature Range
-65 to +150 °C
1.7 V
VF
Maximum Instantaneous Forward Voltage @ 10 A
IR
400 A
Maximum DC Reverse Current
@ TA = 25 °C
at Rated DC Blocking Voltage
@ TA =100 °C
10 A
Cj
Typical Junction Capacitance at 1 MHz
and reverse voltage of 4VDC
50 pF
Weight: 2.24 grams
Trr
Maximum Reverse Recovery Time from
IF = 0.5A; IR = 1A; IRR = 0.25A
Epoxy: UL 94V-0 rate flame retardant
High current capability
High surge current capability
Low power loss.
High temperature soldering guaranteed:
260 °C/10 seconds, 4.06mm from case.
600
420
SFF
508G
200
140
SFF
504G
35 nS
1.3 V
0.98 V
Absolute Maximum Ratings, according to IEC publication No. 134
Electrical Characteristics
ITO-220AB
400
280
SFF
506G
1
3
2
70 pF
PIN 2
PIN 1
PIN 3
相關PDF資料 |
PDF描述 |
|---|---|
| SMD1408B | VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| SMV1407B | VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| SMV20415-01 | VHF-UHF BAND, 11.3 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| SMV20423 | VHF-UHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| SMV2108-08 | 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SFF508G C0 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 600V 5A 3-Pin(3+Tab) ITO-220AB Tube |
| SFF50N20/3 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:50 AMPS 200 VOLTS 0.050 OHM N-Channel POWER MOSFET |
| SFF50N20-3 | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:50 AMPS 200 VOLTS 0.050 OHM N-Channel POWER MOSFET |
| SFF50N20B | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:50 AMPS 200 VOLTS 0.050 OHM N-Channel POWER MOSFET |
| SFF50N20M | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET |
發布緊急采購，3分鐘左右您將得到回復。