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參數資料
| 型號： | SFF7002KA2GW |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Microminiature Package 300 mA 60 Volts 2 ヘ Dual N-Channel Logic Level TrenchFET MOSFET |
| 中文描述： | 300 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE PACKAGE-6 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 184K |
| 代理商： | SFF7002KA2GW |
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0024A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF7002KA2 __ __
│
│
│
│
│
│
└
Package
3
/
GW = GULLWING
│
│
└
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
SFF7002KA2GW
Dual Microminiature Package
300 mA 60 Volts 2
Dual N-Channel Logic Level
TrenchFET MOSFET
Features:
Low On-resistance, < 2 ohm
Low Input Capacitance, < 25 pF
Low threshold voltage, < 2 V
Fast switching, < 25 ns
TX, TXV, and S-Level Screening Available.
Consult Factory
Maximum Ratings
Symbol
Value
Units
Gate – Source Voltage
V
GS
20
Volts
Drain to Source Voltage
Continuous Drain Current T
A
= 25
o
C
V
DS
60
Volts
T
A
= 100
o
C
I
D
300
190
mA
Instantaneous (pulsed) Drain Current, Tj limited
I
DM
800
mA
Power Dissipation @ T
A
= 25
o
C
Per Device
Total
P
D
350
500
mW
mW
Maximum Thermal Resistance, Junction to PCB
R
Θ
J-PCB
5/
250
oC/W
Operating & Storage Temperature
T
OP &
T
STG
-65 to +200
oC
PACKAGE OUTLINE: GULLWING (GW)
P
P
P
P
P
P
P
P
S
.193
.015±.010
.040
±.010
.350
±.010
6x R.010
.033
3x .015
.010
.107
.130
2x .050
(=.100)
6x .030
.107
.034
.125
6x .010
.025
5x R.018
.015
.035
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