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參數(shù)資料
| 型號(hào)： | SFH600-3-X016 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-6 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 121K |
| 代理商： | SFH600-3-X016 |
Document Number: 83662
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.6, 10-Dec-08
587
SFH600
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
between emitter and detector
t = 1.0 s
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between emitter
and detector
≥ 0.4
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Junction temperature
max. 10 s, dip soldering
Tj
100
°C
Soldering temperature (2)
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Breakdown voltage
IR = 10 A
VBR
6V
Reverse current
VR = 6 V
IR
0.01
10
A
Capacitance
VF = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance
Rthja
750
K/W
OUTPUT
Collector emitter capacitance
f = 1 MHz, VCE = 5 V
CCE
5.2
pF
Collector base capacitance
f = 1 MHz, VCB = 5 V
CCB
6.5
pF
Emitter base capacitance
f = 1 MHz, VEB = 5 V
CEB
9.5
pF
Thermal resistance
Rthja
500
K/W
Collector emitter leakage
current
VCE = 10 V
SFH600-0
ICEO
235
nA
SFH600-1
ICEO
235
nA
SFH600-2
ICEO
235
nA
SFH600-3
ICEO
570
nA
COUPLER
Saturation voltage collector
emitter voltage
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Capacitance (input to output)
CIO
0.6
pF
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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