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參數(shù)資料
| 型號： | SFH601-1 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | ROHS COMPLIANT, PLASTIC, DIP-6 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 132K |
| 代理商： | SFH601-1 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83663
594
Rev. 1.4, 10-Dec-08
SFH601
Vishay Semiconductors
Optocoupler, Phototransistor
Output, with Base Connection
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter voltage
VCE
100
V
Emitter base voltage
VEBO
7V
Collector current
IC
50
mA
t = 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
between emitter and detector
t = 1.0 s
VISO
5300
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to +100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Breakdown voltage
IR = 10 A
VBR
6V
Reverse current
VR = 6 V
IR
0.01
10
A
Capacitance
VF = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance
Rthja
750
K/W
OUTPUT
Collector emitter capacitance
f = 1 mHz, VCE = 5 V
CCE
6.8
pF
Collector base capacitance
f = 1 mHz, VCB = 5 V
CCB
8.5
pF
Emitter base capacitance
f = 1 mHz, VEB = 5 V
CEB
11
pF
Thermal resistance
Rthja
500
K/W
Collector emitter leakage current
VCE =10 V
SFH601-1
ICEO
250
nA
SFH601-2
ICEO
250
nA
SFH601-3
ICEO
5
100
nA
SFH601-4
ICEO
5
100
nA
COUPLER
Saturation voltage collector emitter
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Capacitance (input to output)
VI-O = 0, f = 1 MHz
CIO
0.6
pF
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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| SFH601-1X001 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 40-80% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH601-1X006 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 40-80% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH601-1X007 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 40-80% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH601-1X009 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler, Phototransistor Output, with Base Connection |
| SFH601-1X009T | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 40-80% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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