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參數資料
| 型號： | SFH610A-4-X016 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-4 |
| 文件頁數： | 3/10頁 |
| 文件大小： | 158K |
| 代理商： | SFH610A-4-X016 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83666
608
Rev. 2.0, 10-Dec-08
SFH610A, SFH6106
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
DC forward current
IF
60
mA
Surge forward current
t
≤ 10 s
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
OUTPUT
Collector emitter voltage
VCE
70
V
Emitter collector voltage
VEC
7V
Collector current
IC
50
mA
tp ≤ 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Insulation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index per DIN
IEC112/VDE 0303 part 1
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Soldering temperature (2)
max. 10 s, dip soldering distance
to seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6 V
IR
0.01
10
A
Capacitance
VR = 0 V, f = 1 MHz
CO
13
pF
Thermal resistance
Rthja
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
5.2
pF
Thermal resistance
Rthja
500
K/W
Collector emitter leakage current
VCE = 10 V
SFH610A-1
ICEO
250
nA
SFH6106-1
ICEO
250
nA
SFH610A-2
ICEO
250
nA
SFH6106-2
ICEO
250
nA
SFH610A-3
ICEO
5
100
nA
SFH6106-3
ICEO
5
100
nA
SFH610A-4
ICEO
5
100
nA
SFH6106-4
ICEO
5
100
nA
SFH610A-5
ICEO
5
100
nA
SFH6106-5T
ICEO
5
100
nA
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