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參數(shù)資料
| 型號(hào)： | SFH615A-2-X016 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-4 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 152K |
| 代理商： | SFH615A-2-X016 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83671
632
Rev. 2.1, 10-Dec-08
SFH615A, SFH6156
Vishay Semiconductors
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
DC forward current
IF
60
mA
Surge forward current
tp ≤ 10 s
IFSM
2.5
A
OUTPUT
Collector emitter voltage
VCE
70
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
tp ≤ 1.0 ms
IC
100
mA
COUPLER
Isolation test voltage
between emitter and detector
t = 1.0 s
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Insulation thickness between emitter and detector
≥ 0.4
mm
Comparative tracking index per
DIN IEC112/VDE 0303 part 1
CTI
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to +100
°C
Soldering temperature (2)
max. 10 s, dip soldering distance to
seating plane
≥ 1.5 mm
Tsld
260
°C
0
50
100
150
200
0
255075
100
125
150
18483
P
tot
-
Po
w
er
Dissipation
(m
W
)
Phototransistor
Diode
T
amb - Ambient Temperature (°C)
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相關(guān)代理商/技術(shù)參數(shù) |
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| SFH615A-2X017 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH615A-2X017T | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH615A-2X019T | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 63-125% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| SFH615A-2XSMT/R | 制造商:Isocom Components 功能描述:SFH615A Series 1 Channel 70 V 5300 Vrms Phototransistor Optocoupler SMT DIP-4 |
| SFH615A-3 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR 100-200% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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