
www.infineon.com/opto 1-888-Infineon (1-888-463-4636)
2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA
2–228
March 27, 2000-00
SFH610A/617A
5.3 kV TRIOS
High Reliability
Optocoupler
FEATURES
Variety of Current Transfer Ratios at I
– SFH610A/617A-1, 40–80%
– SFH610A/617A-2, 63–125%
– SFH610A/617A-3, 100–200%
– SFH610A/617A-4, 160–320%
Low CTR Degradation
Good CTR Linearity Depending on Forward Current
Withstand Test Voltage, 5300 V
High Collector-Emitter Voltage,
Low Saturation Voltage
Fast Switching Times
Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
Temperature Stable
Low Coupling Capacitance
End-Stackable, .100" (2.54 mm) Spacing
High Common-Mode Interference Immunity
(Unconnected Base)
Underwriters Lab File #52744
VDE 0884 Available with Option 1
D E
F
=10 mA
RMS
V
CEO
=70 V
DESCRIPTION
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an opera-
tion voltage of 400 V
RMS
or DC.
Specifications subject to change.
Maximum Ratings
Emitter
Reverse Voltage.........................................................................6.0 V
DC Forward Current.................................................................60 mA
Surge Forward Current (t
P
≤
10
μ
s).............................................2.5 A
Total Power Dissipation.........................................................100 mW
Detector
Collector-Emitter Voltage............................................................70 V
Emitter-Collector Voltage...........................................................7.0 V
Collector Current .....................................................................50 mA
Collector Current (t
P
≤
1.0 ms).................................................100 mA
Total Power Dissipation.........................................................150 mW
Package
Isolation Test Voltage between Emitter and Detector,
refer to Climate DIN 40046, part 2, Nov. 74................. 5300 V
Creepage............................................................................
Clearance...........................................................................
Insulation Thickness between Emitter and Detector..........
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .......................................
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C.........................................................
V
IO
=500 V,
T
A
=100
°
C.......................................................
Storage Temperature Range ......................................–55 to +150
Ambient Temperature Range......................................–55 to +100
Junction Temperature..............................................................100
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm)....................................260
RMS
≥
≥
≥
7.0 mm
7.0 mm
0.4 mm
≥
175
≥
≥
10
10
12
11
°
°
°
C
C
C
°
C
1
2
4
3
Emitter
Collector
Anode
Cathode
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4
°
typ.
.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
.050 (1.27)
10
°
3
°
–
9
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
Dimensions in Inches (mm)
SFH617A
1
2
4
3
Emitter
Collector
Anode
Cathode
SFH610A