
1
Maximum Ratings
Emitter
Reverse Voltage ..............................................................................
Surge Forward Current (t
P
≤
10
μ
s).....................................................
Total Power Dissipation.................................................................. 100 mW
Detector
Collector-Emitter Voltage..................................................................... 70 V
Emitter-Collector Voltage........................................................................ 7 V
Collector Current...............................................................................50 mA
Collector Current (t
P
≤
1 ms) .............................................................100 mA
Total Power Dissipation.................................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74................................................................... 5300 VAC
Creepage .........................................................................................
Clearance.........................................................................................
Insulation Thickness between Emitter and Detector....................... 0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1.................................................... 175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ...................................................................
V
IO
=500 V, T
A
=100
°
C .................................................................
Storage Temperature Range................................................ –55 to +150
Ambient Temperature Range ............................................... –55 to +100
J unction Temperature........................................................................ 100
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm) ............................................. 260
±
60 mA
±
2.5 A
RMS
7 mm
≥
7 mm
≥
≥
≥
10
10
12
11
°
°
°
C
C
C
°
C
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4
°
typ.
1.00 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
.050 (1.27)
10
°
3
°
–9
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
1
2
4
3
Collector
Emitter
Anode/
Cathode
Cathode/
Anode
Dimensions in Inches (mm)
FEATURES
High Current Transfer Ratios
at 5 mA: 50–600%
at 1 mA: 45% typical (>13)
Low CTR Degradation
Good CTR Linearity Depending on Forward
Current
Isolation Test Voltage, 5300 VAC
High Collector-Emitter Voltage, V
Low Saturation Voltage
Fast Switching Times
Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
Temperature Stable
Low Coupling Capacitance
End-Stackable, .100"(2.54 mm) Spacing
High Common-Mode Interference Immunity
(Unconnected Base)
Underwriters Lab File #52744
VDE 0884 Available with Option 1
SMD Option, See SFH6206 Data Sheet
RMS
CEO
=70 V
DESCRIPTION
The SFH620AA/AGB features a high current transfer
ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emit-
ting diode emitter, which is optically coupled to a sil-
icon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spac-
ing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
to an operation voltage of 400 V
RMS
or DC.
SFH620AA/AGB
5.3 kV TRIOS
AC Voltage Input
Optocoupler