
5–279
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage............................................................................3 V
DC Forward Current ................................................................25 mA
Surge Forward Current.................................................................1 A
tp
≤
1
μ
s, 300 pulses/sec.
Total Power Dissipation...........................................................45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage................................................................–0.5 to 30 V
Output Voltage..............................................................–0.5 to
Output Current...........................................................................8 mA
Total Power Dissipation.........................................................100 mW
Package Insulation
Isolation Test Voltage
between emitter and detector .....................................5300 VAC
(refer to climate DIN 40046, part 2, Nov. 74)
Creepage........................................................................
Clearance .......................................................................
Comparative Tracking Index
per DIN IEC 112/VDE0303, part 1.........................................
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C, R
ISOL
...............................................
V
IO
=500 V, T
A
=100
°
C, R
ISOL
.............................................
Storage Temperature Range ......................................–55 to +150
Ambient Temperature Range......................................–55 to +100
Junction Temperature ..............................................................100
Soldering Temperature (t=10 sec. max.).................................260
Dip soldering: distance to seating plane
≥
25 V
PK
≥
≥
7 mm min.
7 mm min.
≥
175
≥
≥
10
10
12
11
°
°
°
°
C
C
C
C
≥
1.5 mm
1
2
3
4
8
7
6
5
VCC
NC
Collector
Emitter
NC
Anode
Cathode
NC
.268 (6.81)
.255 (6.48)
3
4
6
5
.390 (9.91)
.045 (1.14)
°
T4
.10Typ.
°
10
3
°
–9
°
.305 typ.
(7.75) typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
1
2
8
7
Pin
I.D.
.150 (3.81)
.040 (1.02)
Package Dimensions in Inches (mm)
FEATURES
Direct Replacement for HCPL4503
High Speed Optocoupler without Base Connection
GaAlAs Emitter
Integrated Detector with Photodiode and Transistor
High Data Transmission Rate: 1 MBit/s
TTL Compatible
Open Collector Output
CTR at IF=16 mA, V
O
=0.4 V, V
T
A
=25
°
C:
≥
19%
Good CTR Linearity Relative to Forward Current
Field Effect Stable
Low Coupling Capacitance
Very High Common Mode Transient Immunity
dV/dt:
≥
15 kV/
μ
s at V
CM
=1500 V
Insulation Test Voltage: 5300 VAC
VDE 0884 Available with Option 1
UL Approval, File #E52744
CC
=4.5 V,
PK
APPLICATIONS
Data Communications
IGBT Drivers
Programmable Controllers
DESCRIPTION
The SFH6345 is an optocoupler with a GaAlAs infrared
emitting diode, optically coupled to an integrated photode-
tector consisting of a photodiode and a high speed transis-
tor in a DIP-8 plastic package. The device is similar to the
6N135 but has an additional Faraday shield on the detector
which enhances the input-output dv/dt immunity.
Signals can be transmitted between two electrically sepa-
rated circuits up to frequencies of 2 MHz. The potential dif-
ference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
D E
SFH6345
HIGH SPEED 5.3 kV OPTOCOUPLER