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參數(shù)資料
| 型號(hào)： | SFI9Z34 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | IPAK-3 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 288K |
| 代理商： | SFI9Z34 |
SFW/I9Z34
BV
DSS
= -60 V
R
DS(on)
= 0.14
I
D
= -18 A
-60
-18
-12.6
-72
±
30
555
-18
8.2
-5.5
3.8
82
0.55
- 55 to +175
300
1.83
40
62.5
--
--
--
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
!
Extended Safe Operating Area
!
175
o
C Operating Temperature
!
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= -60V
!
Low R
DS(ON)
: 0.106
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
A
o
C
*
O
1
O
O
1
O
1
2
O
3
Rev. C
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|---|---|
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