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參數資料
| 型號： | SFP2955 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel Power MOSFET(漏源電壓為-60V的P溝道功率MOS場效應管) |
| 中文描述： | 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 250K |
| 代理商： | SFP2955 |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
175
o
C Opereting Temperature
Extended Safe Operating Area
Lower Leakage Current : -10
μ
A (Max.) @ V
DS
= -60V
Low R
DS(ON)
: 0.22
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θ
JC
R
θ
CS
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Value
-60
-9.4
-6.6
-38
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
TO-220
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
O
1
O
1
2
O
3
SFP2955
BV
DSS
= -60 V
R
DS(on)
= 0.3
I
D
= -9.4 A
151
-9.4
4.9
-5.5
49
0.33
- 55 to +175
300
3.06
--
62.5
--
0.5
--
2
0
1999 Fairchild Semiconductor Corporation
Rev. B
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