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參數資料
型號: SFP95N03L
廠商: Electronic Theatre Controls, Inc.
英文描述: Logic N-Channel MOSFET
中文描述: 邏輯N溝道MOSFET
文件頁數: 1/7頁
文件大小: 1109K
代理商: SFP95N03L
{
{
{
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
30
V
I
D
Continuous Drain Current(@T
C
= 25
°C)
(Note 6)
95
A
Continuous Drain Current(@T
C
= 100
°C)
67.3
A
I
DM
Drain Current Pulsed
(Note 1)
380
±
20
A
V
GS
Gate to Source Voltage
V
E
AS
dv/dt
Single Pulsed Avalanche Energy
(Note 2)
450
mJ
Peak Diode Recovery dv/dt
(Note 3)
7.0
V/ns
P
D
Total Power Dissipation(@T
C
= 25 °C)
150
W
Derating Factor above 25 °C
1.0
W/°C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 175
°C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Typ.
Units
Min.
Max.
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
-
-
1.0
°C/W
Thermal Resistance, Case to Sink
-
0.5
-
°C/W
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
S FP95N03L
September, 2002. Rev. 0.
1/7
Features
Low R
DS
(on) (0.0085
)@V
GS
=10V
Low Gate Charge
(Typical 39nC)
Low Crss
(Typical 185pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range
(175°C)
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
Logic N-Channel MOSFET
S emiWell
Semiconductor
Symbol
2. Drain
3. Source
1. Gate
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
TO-220
123
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