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參數(shù)資料
| 型號(hào)： | SFRC9130S.5B |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 10 AMP /100 Volts 300 mヘ Radiation Tolerant P-Channel MOSFET |
| 中文描述： | 10 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALSED, SMD.5, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | SFRC9130S.5B |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
POWERShield
TM
Technology
PS-Hard Radiation Hardened MOSFETs
SFRC9130
__ B__
│
│
│
│
│
└
Screening
2/
__
= Commercial
TX = TX Level
TXV = TXV Level
S = S Level
└
Package:
S.5
= SMD.5
SFRC9130S.5B
10 AMP /100 Volts
300 m
Radiation Tolerant
P-Channel MOSFET
Features:
Advanced POWERShield
TM
Technology
TID 100K Rad
Excellent high temperature stability
Hermetically Sealed Power Package
Low Total Gate Charge
Fast Switching
Replacement for IRHNJ9130 and F9130 types
Maximum Ratings
Symbol
Value
Units
Drain - Source Voltage
V
DSS
V
GS
-100
V
Gate – Source Voltage
±20
V
Max. Continuous Drain Current (package limited)
@ T
C
= 25oC
@ T
C
= 100oC
@ L= 5.0 mH
I
D1
I
D2
10
7
A
Max. Avalanche current
I
AR
E
AR
E
AS
9.8
A
Repetitive Avalanche Energy
@ L= 5.0 mH
5.2
mJ
Single Pulse Avalanche Energy
@ L= 5.0 mH
320
mJ
Total Power Dissipation
@ T
C
= 25oC
P
D
75
W
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
T
OP
& T
STG
-55 to +150
oC
R
0JC
1.65
oC/W
PACKAGE OUTLINE:
SMD.5
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FR0016A DOC
.145
.115
.304
.288
.408
.392
.304
.288
3x .010
.030 MIN
.128
.112
.233
.217
2x .010
MAX
2x .087
.030 MIN
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