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參數(shù)資料
| 型號： | SFS9620 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 257K |
| 代理商： | SFS9620 |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= -200V
Low R
DS(ON)
: 1.111
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
θ
JC
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Characteristic
Value
-200
-3.0
-1.9
-12
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
O
1
O
1
2
O
3
SFS9620
BV
DSS
= -200 V
R
DS(on)
= 1.5
I
D
= -3.0 A
240
-3.0
2.8
-5.0
28
0.22
- 55 to +150
300
4.46
62.5
--
--
30
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SFS9624 | Advanced Power MOSFET |
| SFS9630 | Advanced Power MOSFET |
| SFS9634 | Advanced Power MOSFET |
| SFS9640 | Advanced Power MOSFET |
| SFS9644 | Advanced Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SFS9624 | 功能描述:MOSFET PCh/250V/2.4a/2.4Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFS9630 | 功能描述:MOSFET PCh/200V/4.4a/0.8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFS9630YDTU | 功能描述:MOSFET P-Ch/200V/4.4a 0.8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFS9630YDTUAS001 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| SFS9634 | 功能描述:MOSFET PCh/250V/3.4a/1.3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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