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參數(shù)資料
| 型號： | SFT5666-39 |
| 廠商： | Solid States Devices, Inc. |
| 英文描述： | 5 AMP 180 VOLTS HIGH SPEED NPN TRANSISTOR |
| 中文描述： | 5安培180伏特高速NPN晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 53K |
| 代理商： | SFT5666-39 |
SOLID STATE DEVICES, INC.
14830 Valley View Avenue * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
SFT5666/39
FEATURES:
High Performance replacement for 2N5666
Radiation Tolerant
Faster Switching, t
(
on)
< 150ns
Higher Frequency, ft > 30MHz
Higher gain, 40 @ 5A
Lower Saturation Voltage, 1.5v @ 5A
200
o
C Operating, Gold Eutectic Die Attach
PNP Compliment available - contact the factory
DATA SHEET #:
MAXIMUM RATINGS
SYMBOL
UNITS
VALUE
V
EBO
6
Volts
Emitter-Base Voltage
V
CBO
200
Volts
Collector-Base Voltage
I
C
5
Collector Current
Collector-Emitter Voltage
V
CEO
180
Amps
Volts
o
C
W
o
C/W
TO-39
5 AMP
180 VOLTS
HIGH SPEED
NPN TRANSISTOR
Operating and Storage Temperature
T
J,
T
STG
-65 to +200
15
Thermal Resistance, Junction to Case
R
0
JC
20
Total Device Dissipation @ T
C
=100
o
C
P
D
I
B
1
Base Current
Amps
ELECTRICAL CHARACTERISTICS
SYMBOL
UNITS
MIN
MAX
V
180
-
BV
CEO
Collector-Emitter Breakdown Voltage
(I
C
=30mA
DC
)
Collector-Base Breakdown Voltage
(I
C
=200uA
DC
)
Emitter-Base Breakdown Voltage
(I
E
=200uA
DC
)
Collector Cutoff Current
(V
CB
=180V
DC
)
Collector Cutoff Current
(V
CE
=120V
DC
)
V
200
-
V
6
-
BV
EBO
μ
A
-
2
I
CBO
μ
A
-
10
I
CEO
BV
CBO
DESIGNER'S DATA SHEET
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
TR0027A
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