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參數資料
| 型號： | SFT8600 |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 AMP 1000 VOLTS NPN TRANSISTOR |
| 中文描述： | 1000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 165K |
| 代理商： | SFT8600 |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
FEATURES:
BVCEO to 400 volts
Very Low Saturation Voltage
Very Low Leakage
High Gain from 20 mA to 250 mA
200° C Operating, Gold Eutectic Die Attach
Superior Performance over JEDEC 2N5010-15 Series
High Speed Switching tf = 0.4μS TYP
SFT8600
1 AMP
1000 Volts
NPN Transistor
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
(RBE = 1K
)
V
CEO
V
CER
400
1000
V
Collector – Base Voltage
V
CBO
1000
V
Emitter – Base Voltage
V
EBO
6
V
Collector Current
I
C
1
A
Base Current
I
B
100
A
Total Device Dissipation
@ TC = 100o C
Derate above 25o C
P
D
2.0
2.0
W
mW/oC
Operating and Storage Temperature
Tj, Tstg
-65 to +200
oC
Thermal Resistance, Junction to Case
R
θ
JC
30
oC/W
CASE OUTLINE: TO-5
FIGURE 1
OUTLINE AND DIMENSIONS
All dimensions are in inches
Tolerances:
(unless otherwise specified)
XX: ±0.01”
XXX: ±0.005”
Pin 1: Emitter
Pin 2: Base
Pin 3: Collector
Case: Collector
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033 G
DOC
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