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參數資料
| 型號： | SFU9214 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 1.53 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | IPAK-3 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 309K |
| 代理商： | SFU9214 |
SFR/U9214
BV
DSS
= -250 V
R
DS(on)
= 4.0
I
D
= -1.53 A
-250
-1.53
-0.97
-6.1
+30
110
-1.53
1.9
-4.8
2.5
19
0.15
- 55 to +150
300
6.58
50
110
--
--
--
ν
Avalanche Rugged Technology
ν
Rugged Gate Oxide Technology
ν
Lower Input Capacitance
ν
Improved Gate Charge
ν
Extended Safe Operating Area
ν
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= -250V
ν
Lower R
DS(ON)
: 3.15
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
o
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
o
C)
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
＂
from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
A
o
C
*
D-PAK
1. Gate 2. Drain 3. Source
1
2
3
I-PAK
1
3
2
O
1
O
O
1
O
1
2
O
3
Rev. B1
2001 Fairchild Semiconductor Corporation
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SFU9214TU | 功能描述:MOSFET P-CH/250V/1.53A/4OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFU9220 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| SFU9220TU | 功能描述:MOSFET PCh/200V/3.1a/1.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFU9220TU_AM002 | 功能描述:MOSFET P-Ch 200V 3.1A 1.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFU9220TU_F080 | 功能描述:MOSFET Trans P-Ch 200V 3.1A 3Pin 3+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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