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參數資料
| 型號： | SFU9230B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V P-Channel MOSFET |
| 中文描述： | 5.4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | IPAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 628K |
| 代理商： | SFU9230B |
2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
S
SFR9230B / SFU9230B
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
-5.4A, -200V, R
DS(on)
= 0.8
@V
GS
= -10 V
Low gate charge ( typical 33 nC)
Low Crss ( typical 45 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
SFR9230B / SFU9230B
-200
-5.4
-3.4
-22
±
30
390
-5.4
4.9
-5.5
2.5
49
0.39
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
2.55
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
I-PAK
SFU Series
D-PAK
SFR Series
G
S
D
G
S
D
●
●
●
▲
!
!
D
!
!
●
S
G
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| SFW9530 | Advanced Power MOSFET |
| SFI9530 | Advanced Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SFU9230BTU | 功能描述:MOSFET P-CH/200V/5.4A/0.8HM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFU9310 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Advanced Power MOSFET |
| SFU9310TU | 功能描述:MOSFET P-CH/400V/1.5A/8OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SFUG915A01E | 制造商:Panasonic Industrial Company 功能描述:GEAR |
| SFUI016GJ1AB1TO-I-GS-2A1-STD | 功能描述:MODULE FLASH NAND MLC 16GB 制造商:swissbit 系列:U-45 零件狀態:在售 存儲器類型:FLASH - NAND（MLC） 存儲容量:16GB 速度:- 封裝/外殼:模塊 標準包裝:1 |
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