
35
Crystal oscillator
1 ST OE
2 GND GND
3 OUT OUT
4 V
DD
V
DD
NO.
#4
#3
#1
0.5
5.08
(1.0)
(1.0)
3.6
#2
5
2
2
5
10.5 Max.
Recommended soldering pattern
External dimensions
Specifications (characteristics)
(Unit: mm)
(Unit: mm)
18.4320C
PTF9352A
E
1.3
3.8
1.3
2
2
2
Pin terminal
SG-636SCE SG-636P
SMALL SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-636 series
A small SMD that enables high-density mounting.
A general-purpose device with builtin heat-resisting cylindrical
AT-cut crystal and allowing almost the same temperature
condition for soldering as SMD IC.
Low current consumption.
Provided with output enable function.
3.3 V operation, stand-by function available.
Item
Output frequency range
Power source
voltage
Temperature
range
Soldering condition
Frequency stability
Current consumption
Duty
Output voltage
Output load condition
(fan out)
Output enable/disable input voltage
Output disable current
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
C-MOS level
TTL level
C-MOS
TTL
C-MOS level
TTL level
C-MOS level
TTL level
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
T
SOL
f/f
0
lop
t
w
/
t
V
OH
(I
OH
)
V
OL
(I
OL
)
C
L
N
V
IH
V
IL
I
OE
t
TLH
t
THL
tosc
fa
S.R.
SG-636PTF
SG-636PTJ
SG-636PH
Specifications
41.0001
MHz
to 70.0000
MHz
2.21675 MHz to
41.0000 MHz
-0.5 V to +7.0 V
Remarks
-55
°
C to +100
°
C
-20
°
C to +70
°
C
Twice at under +260
°
C within 10 s
or under +230
°
C within 3 min.
C: ±100 x 10
-6
35 mA Max.
—
45 % to 55 %
17 mA Max.
40 % to 60 %
V
DD
-0.4 V Min.
-8 mA
16 mA
50 pF Max.
10 TTL Max.
2.0 V Min.
0.8 V Max.
10 mA Max.
7 ns Max.
7 ns Max.
4 ms Max.
2.4 V Min.
-400 μA
8 mA
15 pF
5 TTL Max.
3.5 V Min.
1.5 Max.
28 mA Max.
—
—
40 % to 60 %
20 pF Max.(
≤
55 MHz)
15 pF Max.( > 55 MHz)
5 LSTTL Max.
2.0 V Min.
0.8 V Max.
20 mA Max.
Stored as bare product after unpacking
No load condition
C-MOS load: 1/2 V
DD
level
TTL load: 1.4 V level
C
L
<
15 pF
I
IH
=1
μ
A Max.(OE=V
DD
)PTF.PTJ.PH
I
IL
=-100
μ
A Min. (OE=GND) PTF.PH -500
μ
A Min. (OE=GND) PTJ
OE=GND, ST=GND 2 μA Max.(SCE)
C-MOS load: 20 %
→
80 % V
DD
TTL load: 0.4 V
→
2.4 V
C-MOS load: 80 %
→
20 % V
DD
TTL load: 2.4 V
→
0.4 V
Time at 4.5
V
to be O s
Ta=+25
°
C,V
DD
=5
V
,first year
Three drops on a hard board from 750 mm or excitation test
with 29400 m/s
2
x 0.3 ms x 1/2 sine wave in 3 directions
10 ms Max.
±5 x 10
-6
/year Max.
±20 x 10
-6
Max.
Note:
Unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
External by-pass capacitor is required.
Metal may be exposed on the top of this product. This won't affect any quality, reliability or electrical spec.
-0.5 V to +7.0 V
5 ns Max.
5 ns Max.
SG-636SCE/PCE
-0.3 V to +7.0 V
5.0 V ±0.5 V
2.21675 MHz to
41.0000 MHz
3.3 V ±0.3 V
9 mA Max.
45 % to 55 %
30 pF Max.
—
0.8 V
DD
Min.
0.2 V
DD
Max.
5 mA Max.
—
V
DD
-0.4 V Min.
-4 mA
0.4 V Max.
4 ms Max.
5 ns Max.
—
5 ns Max.
—
4 mA