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參數資料
| 型號： | SG-8002DC |
| 廠商： | 愛普生（中國）有限公司 |
| 英文描述： | Programmable High-Frequency Crystal Oscillator（DIP）(可編程高頻晶體振蕩器（DIP封裝）) |
| 中文描述： | 可編程高頻晶體振蕩器明日（星期五）（可編程高頻晶體振蕩器明日（星期五封裝）） |
| 文件頁數： | 1/1頁 |
| 文件大小： | 214K |
| 代理商： | SG-8002DC |
39
Crystal oscillator
(Unit: mm)
5
2
0
0.25
7.62
7.62
#
4
#
1
#
5
#
8
13.7 Max.
6
100.0000 C
2PH
9357B
EPSON
No.
1
4
5
8
OE or ST
GND
OUT
V
DD
No.
1
7
8
14
OE or ST
GND
OUT
V
DD
90
°
to 105
°
90
°
to 105
°
0.25
External dimensions
Specifications (characteristics)
(Unit: mm)
Pin terminal
Pin terminal
19.8
Max.
6
2
5
0
M
15.24
0.51
7.62
# 14
# 8
# 1
# 7
9357B
16.0000 C
EPSON
2PH
SG-8002DB series
SG-8002DC series
0.51
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-8002DB/ DC series
Wide frequency output by PLL technology.
Quick delivery of samples and short lead mass production time.
Excellent shock resistance and environmental capability.
Output enable function (OE) and stand-by function (ST) can be
used for low current consumption applications.
Pin compatible with full size and half size.
Item
Output frequency range
Power source
voltage
Temperature
range
Soldering condition
Frequency stability
Current consumption
Output disable current
Standby current
Duty
High output voltage
Low output voltage
Output load
condition (fan out)
Output enable/disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
T
SOL
f/f
0
Iop
I
OE
I
ST
t
w
/
t
V
OH
V
OL
N
C
L
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
TTL
C-MOS
C-MOS level
TTL level
C-MOS level
TTL level
PT/ST
PH/SH
PC/SC
Specifications
1.0000 MHz to
125.0000 MHz
-0.5 V to +7.0 V
5.0
V
±0.5
V
3.3
±
0.3
V
-55
°
C to +125
°
C
-20
°
C to +70
°
C (-40
°
C to +85
°
C)
Twice at under +260
°
C
within 10 s
or under +230
°
C
within 3 min.
-40
°
C
to +85
°
C
B: ±50 x
10
-6
C: ± 100 x
10
-6
M: ±100 x
10
-6
45 mA Max.
30 mA Max.
28 mA Max.
16 mA Max.
—
40 % to 60 %
—
40 % to 60 %
V
DD
-0.4 V Min.
0.4 V Max.
5 TTL Max.
15 pF Max.
—
25 pF Max.
15 pF Max.
0.7 x V
DD
Min.
0.2 x V
DD
Max.
2.0 V Min.
0.8 V Max.
—
4 ns Max.
—
4 ns Max.
—
4 ns Max.
—
4 ns Max.
10 ms Max.
±5 x 10
-6
/year Max.
±20 x 10
-6
Max.
Remarks
3.0 V ±0.3 V: f
0
≤
66.7 MHz(PC/SC)
Refer to page 4."Frequency range"
B,C: -20
°
C
to +70
°
C, M: -40
°
C to +85
°
C
No load condition, Max. frequency range
OE=GND(PT, PH, PC)
ST=GND(ST, SH, SC)
C-MOS load: 1/2 V
DD
level
TTL load: 1.4 V level
I
OH
=-16 mA(PT/ST, PH/SH),-8 mA(PC/SC)
I
OL
= 16 mA(PT/ST, PH/SH), 8 mA(PC/SC)
Max. frequency and Max. operating voltage range
ST
_
, OE terminal
C-MOS load: 20
%
→
80
%
V
DD
TTL load: 0.4 V
→
2.4 V
C-MOS load: 80
%
→
20
%
V
DD
TTL load: 2.4 V
→
0.4 V
Time at minimum operating voltage to be 0 s
Ta= +25
°
C
, V
DD
= 5.0 V/3.3 V(PC/SC)
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s
2
x 0.3 ms x
1/2sine wave in 3 directions
Note:
Please contact us for inquiries about operating temperature(-40
°
C
to +85
°
C
), usable frequencies, duty and output load conditions.
Checking possible by the Frequency Checking Program.
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
50 μA Max.
8002 PROM Writer available to purchase.
(Type:PRW-8000A3-M01)
Please contact EPSON or local sales representative.
Actual size
http://www.epson.co.jp/CRYSTAL/
SG-8002DB
SG-8002DC
(Wired-or connection & Jitter specification, please refer to page 13.)
(Wired-or connection & Jitter specification, please refer to page 13.)
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