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參數(shù)資料
型號: SG2011
廠商: Microsemi Corporation
英文描述: HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
中文描述: 中型高壓電流驅動陣列
文件頁數(shù): 1/7頁
文件大小: 98K
代理商: SG2011
SG2000 SERIES
4/90 Rev 1.3 6/97
Copyright
1997
L
IN
F
IN
ITY
Microelectronics Inc.
11861 Western Avenue
Garden Grove, CA 92841
(714) 898-8121
FAX: (714) 893-2570
1
DESCRIPTION
The SG2000 series integrates seven NPN Darlington pairs with
internal suppression diodes to drive lamps, relays, and solenoids in
many military, aerospace, and industrial applications that require
severe environments. All units feature open collector outputs with
greater than 50V breakdown voltages combined with 500mA
current carrying capabilities. Five different input configurations
provide optimized designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals. These devices are designed to operate from
-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic
dual in–line (N) is designed to operate over the commercial
temperature range of 0
°
C to 70°C.
FEATURES
Seven npn Darlington pairs
-55°C to 125°C ambient operating temperature range
Collector currents to 600mA
Output voltages from 50V to 95V
Internal clamping diodes for inductive loads
DTL, TTL, PMOS, or CMOS compatible inputs
Hermetic ceramic package
HIGH RELIABILITY FEATURES
Available to MIL-STD-883 and DESC SMD
MIL-M38510/14101BEA - JAN2001J
MIL-M38510/14102BEA - JAN2002J
MIL-M38510/14103BEA - JAN2003J
MIL-M38510/14104BEA - JAN2004J
Radiation data available
LMI level "S" processing available
HIGH VOLTAGE MEDIUM
CURRENT DRIVER ARRAYS
PARTIAL SCHEMATICS
相關PDF資料
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SG2012 HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
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