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參數資料
| 型號： | SGB15N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology |
| 中文描述： | 在不擴散核武器條約快速IGBT技術 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 460K |
| 代理商： | SGB15N60 |
SGP15N120
SGP15N120
SGW15N120
Power Semiconductors
1
Jul-02
Fast IGBT in NPT-technology
40% lower
E
off
compared to previous generation
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
http://www.infineon.com/igbt/Type
V
CE
I
C
E
off
T
j
Package
Ordering Code
SGP15N120
1200V
15A
1.5mJ
150
°
C
TO-220AB
Q67040-S4274
SGB15N120
TO-263AB(D2PAK)
Q67040-S4275
SGW15N120
TO-247AC
Q67040-S4276
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Gate-emitter voltage
V
CE
I
C
1200
V
A
30
15
I
Cpuls
-
52
52
V
GE
E
AS
±
20
85
V
Avalanche energy, single pulse
I
C
= 15A,
V
CC
= 50V,
R
GE
= 25
, start at
T
j
= 25
°
C
Short circuit withstand time
1)
V
GE
= 15V, 100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
mJ
t
SC
10
μ
s
P
tot
198
W
T
j
,
T
stg
-
-55...+150
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-220-3-1
(TO-220AB)
P-TO-247-3-1
(TO-247AC)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
相關PDF資料 |
PDF描述 |
|---|---|
| SGP15N60 | Fast IGBT in NPT-technology |
| SGW15N60 | Fast IGBT in NPT-technology |
| SGP15N60 | Short Circuit Rated IGBT |
| SGW15N60 | Short Circuit Rated IGBT |
| SGW15N60RUF | FEEDTHRU CAPACITOR, 47PF 0.5A 100VFEEDTHRU CAPACITOR, 47PF 0.5A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, +:50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SGB15N60_06 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology |
| SGB15N60ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 31A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 31A 139W TO263-3 |
| SGB15N60HS | 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SGB15N60HS_06 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology |
| SGB15N60HSATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 27A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 27A 138W TO263-3 |
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